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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Zhang, Haiwu
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Topics
Publications (6/6 displayed)
- 2022Solid solution enhanced electrostriction in the YSZ-GDC systemcitations
- 2022Freestanding Perovskite Oxide Films:Synthesis, Challenges, and Propertiescitations
- 2022Freestanding Perovskite Oxide Filmscitations
- 2020Electro-chemo-mechanical effect in Gd-doped ceria thin films with controlled orientationcitations
- 2019Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictorcitations
- 2019Enhanced electro-mechanical coupling of TiN/Ce 0.8 Gd 0.2 O 1.9 thin film electrostrictorcitations
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article
Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor
Abstract
Gadolium doped ceria, Gd:CeO<sub>2</sub> (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (<i>Q</i>), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn<sub>1/3</sub>Nb<sub>2/3</sub>)O<sub>3</sub>.Herein, we show that CGO thin films fabricated by a pulsed laserdeposition method can be directly integrated onto the Si substrate byusing TiN films of few nanometers as functional electrodes. Theexceptional good coupling between TiN and Ce<sub>0.8</sub>Gd<sub>0.2</sub>O<sub>1.9</sub> yields a high electrostriction coefficient of <i>Q</i><sub>e</sub> = 40 m<sup>4</sup> C<sup>−2</sup> and a superior electrochemomechanical stability with respect to the metal electrodes.