| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Guina, Mircea
Tampere University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (36/36 displayed)
- 2024Bridging the gap between surface physics and photonicscitations
- 2024Detection of BiGa hetero-antisites at Ga(As,Bi)/(Al,Ga)As interfacescitations
- 2023Tuneable Nonlinear Spin Response in a Nonmagnetic Semiconductor
- 2022Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Luminescent (Er,Ho)2O3 thin films by ALD to enhance the performance of silicon solar cellscitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2021Room-temperature electron spin polarization exceeding 90% in an opto-spintronic semiconductor nanostructure via remote spin filteringcitations
- 2019Optimization of Ohmic Contacts to p-GaAs Nanowirescitations
- 2019Optimization of Ohmic Contacts to p-GaAs Nanowirescitations
- 2019Thermophotonic cooling in GaAs based light emitterscitations
- 2019V-groove etched 1-eV-GaInNAs nipi solar cellcitations
- 2019Observation of local electroluminescent cooling and identifying the remaining challenges
- 2019Gradients of Be-dopant concentration in self-catalyzed GaAs nanowirescitations
- 2019Influence of ex-situ annealing on the properties of MgF2 thin films deposited by electron beam evaporationcitations
- 2018Surface doping of GaxIn1−xAs semiconductor crystals with magnesiumcitations
- 2017The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wellscitations
- 2017Structured metal/polymer back reflectors for III-V solar cells
- 2017Photo-acoustic Spectroscopy of Resonant Absorption in III-V Semiconductor Nanowires
- 2016High-efficiency GaInP/GaAs/GaInNAs solar cells grown by combined MBE-MOCVD techniquecitations
- 2016Determination of composition and energy gaps of GaInNAsSb layers grown by MBEcitations
- 2016Optical Energy Transfer and Loss Mechanisms in Coupled Intracavity Light Emitterscitations
- 2016Combined MBE-MOCVD process for high-efficiency multijunction solar cells
- 2016High efficiency multijunction solar cells: Electrical and optical properties of the dilute nitride sub-junctions
- 2016Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wellscitations
- 2015Defects in dilute nitride solar cells
- 2015Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayerscitations
- 2015Dilute nitrides for boosting the efficiency of III-V multijunction solar cells
- 2015Detecting lateral composition modulation in dilute Ga(As,Bi) epilayerscitations
- 2015Te-doping of self-catalyzed GaAs nanowirescitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2015Oxidation of the GaAs semiconductor at the Al2O3/GaAs junctioncitations
- 2014Unveiling and controlling the electronic structure of oxidized semiconductor surfaces: Crystalline oxidized InSb(100)(1 × 2)-Ocitations
- 2012Dilute nitride and GaAs n-i-p-i solar cellscitations
- 2011Characterization of InGaAs and InGaAsN semiconductor saturable absorber mirrors for high-power mode-locked thin-disk laserscitations
- 2011Ultrathin (1*2)-Sn layer on GaAs(100) and InAs(100) substrates:A catalyst for removal of amorphous surface oxidescitations
- 2008Passively Q-switched Tm3+, Ho3+-doped silica fiber laser using a highly nonlinear saturable absorber and dynamic gain pulse compressioncitations
Places of action
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article
Thermophotonic cooling in GaAs based light emitters
Abstract
| openaire: EC/H2020/638173/EU//iTPX ; Fundamental thermodynamic considerations reveal that efficient emission from an electrically injected light emitting diode (LED) can lead to the cooling of the device. This effect, known as electroluminescent (EL) cooling, has been identified decades ago, but it has not been experimentally demonstrated in semiconductors at practical operating conditions due to the extreme requirements set for the efficiency of the light emission. To probe the conditions of EL cooling in GaAs based light emitters, we have designed and fabricated LED structures with integrated photodiodes (PDs), where the optically mediated thermal energy transport between the LED and the PD can be easily monitored. This allows characterization of the fundamental properties of the LED and a path for eliminating selected issues encountered in conventional approaches for EL cooling, such as the challenging light extraction. Despite several remaining nonidealities, our setup demonstrates a very high directly measured quantum efficiency of 70%. To characterize the bulk part of the LED, we also employ a model for estimating the power conversion efficiency (PCE) of the LED, without the contribution of non-fundamental nonidealities such as photodetection losses. Our results suggest that the PCE of the LED peaks at around 105-115%, exceeding the 100% barrier required to reach the EL cooling regime by a clear margin. This implies that the LED component in our device is in fact cooling down by transporting thermal energy carried by the emitted photons to the PD. This provides a compelling incentive for further study to confirm the result and to find ways to extend it for practically useful EL cooling. ; Peer reviewed