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Marshall, Andrew Robert Julian
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2019Mid-Infrared InAs/InAsSb Superlattice nBn Photodetector Monolithically Integrated onto Siliconcitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layercitations
- 2019Low bandgap GaInAsSb thermophotovoltaic cells on GaAs substrate with advanced metamorphic buffer layer
- 2019Room-temperature Operation of Low-voltage, Non-volatile, Compound-semiconductor Memory Cellscitations
- 2019Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materialscitations
- 2016Low leakage-current InAsSb nanowire photodetectors on siliconcitations
- 2016Characterization of 6.1 Å III-V materials grown on GaAs and Si: a comparison of GaSb/GaAs epitaxy and GaSb/AlSb/Si epitaxycitations
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article
Extended short-wave infrared linear and Geiger mode avalanche photodiodes, based on 6.1 angstrom materials
Abstract
<p>Extended short-wave infrared (SWIR) avalanche photodiodes based on III-V quaternary alloys were grown on GaSb. An InGaAsSb absorber allowed for cut-off wavelengths of 2.2 mu m and 2.75 mu m, at 77 K and 300 K, respectively. A multiplication layer of AlGaAsSb with Al = 0.9 mole fraction was used, a material recently characterized by our group, allowing for a breakdown voltage of less than 15 V. Linear and 2D arrays were fabricated using BCl3 dry and HF wet-chemical etching, and dielectric passivation layers were tested. These results indicate that extended SWIR single photon detectors can be developed. (C) 2019 Author(s).</p>