| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mikkelsen, Anders
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (44/44 displayed)
- 2024Structural and chemical properties of anion exchanged CsPb(Br<sub>(1−x)</sub>Cl<sub> x </sub>)<sub>3</sub> heterostructured perovskite nanowires imaged by nanofocused x-rayscitations
- 2024Diffusion Bonding 321-Grade Stainless Steel : Failure and Multimodal Characterization
- 2024Diffusion Bonding 321-Grade Stainless Steel
- 2024Bismuth-oxide nanoparticles: study in a beam and as deposited
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)citations
- 2023In situ Imaging of Precipitate Formation in Additively Manufactured Al-Alloys by Scanning X-ray Fluorescencecitations
- 2022Nanometric Moiré Stripes on the Surface of Bi2Se3Topological Insulatorcitations
- 2022In situ imaging of temperature-dependent fast and reversible nanoscale domain switching in a single-crystal perovskitecitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO 2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Unraveling the Ultrafast Hot Electron Dynamics in Semiconductor Nanowirescitations
- 2021Tuning oxygen vacancies and resistive switching properties in ultra-thin HfO2 RRAM via TiN bottom electrode and interface engineeringcitations
- 2021Surface chemistry and diffusion of trace and alloying elements during in vacuum thermal deoxidation of stainless steelcitations
- 2020In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3Perovskite Nanowires by Nanofocused Scanning X-ray Diffractioncitations
- 2020In situ imaging of ferroelastic domain dynamics in CsPbBr3perovskite nanowires by nanofocused scanning X-ray diffractioncitations
- 2019Surface oxide development on aluminum alloy 6063 during heat treatmentcitations
- 2019GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopycitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2018InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer depositioncitations
- 2018Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarizationcitations
- 2017Crystal Structure Induced Preferential Surface Alloying of Sb on Wurtzite/Zinc Blende GaAs Nanowirescitations
- 2015Nanofocused x-ray beams applied for mapping strain in core-shell nanowirescitations
- 2015Nanofocused x-ray beams applied for mapping strain in core-shell nanowirescitations
- 2015Structural Properties of Wurtzite InP-InGaAs Nanowire Core-Shell Heterostructurescitations
- 2015Enhanced Organo-Metal Halide Perovskite Photoluminescence from Nanosized Defect-Free Crystallites and Emitting Sitescitations
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2014High repetition rate XUV laser source based on OPCPA for photoemission electron microscopy applications
- 2013Epitaxial growth and surface studies of the Half Heusler compound NiTiSn (001)citations
- 2013Interface characterization of metal-HfO2-InAs gate stacks using hard x-ray photoemission spectroscopy
- 2012One-Dimensional Corrugation of the h-BN Monolayer on Fe(110)citations
- 2012Al2O3/InAs metal-oxide-semiconductor capacitors on (100) and (111)B substratescitations
- 2012Formation and Structure of Graphene Waves on Fe(110)citations
- 2012Digital in-line holography on amplitude and phase objects prepared with electron beam lithography.citations
- 2011Interface composition of atomic layer deposited HfO2 and Al2O3 thin films on InAs studied by X-ray photoemission spectroscopycitations
- 2011Doping profile of InP nanowires directly imaged by photoemission electron microscopycitations
- 2009Lack of surface oxide layers and facile bulk oxide formation on Pd(110)citations
- 2009Photoemission electron microscopy using extreme ultraviolet attosecond pulse trainscitations
- 2006Structural determination of a low-symmetry surface by low-energy electron diffraction and ab initio calculations: Bi(110)citations
- 2005Cross-sectional scanning tunneling microscopy studies of novel III-V semiconductor structurescitations
- 2004Co on Mo(110) studied by scanning tunneling microscopycitations
- 2002Structural properties of LT-GaAs(100) and GaMnAs(100) surfaces studied by scanning tunneling microscopy
Places of action
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article
InAs-oxide interface composition and stability upon thermal oxidation and high-k atomic layer deposition
Abstract
<p>Defects at the interface between InAs and a native or high permittivity oxide layer are one of the main challenges for realizing III-V semiconductor based metal oxide semiconductor structures with superior device performance. Here we passivate the InAs(100) substrate by removing the native oxide via annealing in ultra-high vacuum (UHV) under a flux of atomic hydrogen and growing a stoichiometry controlled oxide (thermal oxide) in UHV, prior to atomic layer deposition (ALD) of an Al<sub>2</sub>O<sub>3</sub> high-k layer. The semiconductor-oxide interfacial stoichiometry and surface morphology are investigated by synchrotron based X-ray photoemission spectroscopy, scanning tunneling microscopy, and low energy electron diffraction. After thermal oxide growth, we find a thin non-crystalline layer with a flat surface structure. Importantly, the InAs-oxide interface shows a significantly decreased amount of In<sup>3+</sup>, As<sup>5+</sup>, and As<sup>0</sup> components, which can be correlated to electrically detrimental defects. Capacitance-voltage measurements confirm a decrease of the interface trap density in gate stacks including the thermal oxide as compared to reference samples. This makes the concept of a thermal oxide layer prior to ALD promising for improving device performance if this thermal oxide layer can be stabilized upon exposure to ambient air.</p>