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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bucci, Davide
Grenoble Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2022New generation of optical sensors: Fluorescent architecture channel waveguide / diffraction grating developed by sol-gel processing
- 2018Optofluidic Integrated Sensor on Glass for Harsh Environment Measurements: Case of Plutonium(VI) in Nitric Acid
- 2018Opto-electrical simulation of III-V nanowire based tandem solar cells on Sicitations
- 2017Cost effective laser structuration of optical waveguides on thin glass interposer
- 2016Packaged integrated opto-fluidic solution for harmful fluid analysiscitations
- 2013Glass integrated nanochannel waveguide for concentration measurementscitations
- 20121.55 μm hybrid waveguide laser made by ion-exchange and wafer bondingcitations
- 2006Realization of a pump/signal duplexer using periodically segmented waveguide in integrated optics on glass
Places of action
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conferencepaper
Opto-electrical simulation of III-V nanowire based tandem solar cells on Si
Abstract
International audience ; Due to their nanostructured surface, nanowire-based solar cells are good candidates to increase light absorption in thin film solar cells. Among these structures, III-V nanowires grown on silicon substrates, in the form of a tandem solar cell, are particularly interesting to reach high efficiencies. The aim of this work is to perform optical and electrical simulations of tandem solar cells based on III-V nanowire arrays grown on silicon and to compare two different semiconductor compounds (GaAs0.8P0.2 and Ga0.8Al0.2As) with a band gap of 1.7 eV (optimal on Si) for the nanowire array.The simulated structure is composed of a periodic core-shell GaAs0.8P0.2 or Ga0.8Al0.2As nanowire (NW) array on a silicon substrate. In our simulations we are also taking into account a thin (5nm) passivating layer, the oxide used for the encapsulation of the nanowires and the top transparent conducting oxide. The height H of the nanowires is equal to 1.5 µm which is a realistic value from a technological point of view.Optical simulations are performed with an in-house Rigorous Coupled Wave Analysis (RCWA) software. To optimize the absorption of light in the structure, we are taking into account the current matching between the two solar cells in order to find the best geometry of the nanowire array. From the optical simulation, the generation rate is calculated and used as an input for the electrical simulation performed with the TCAD software Sentaurus. From the electrical simulation the power conversion efficiency is extracted for various doping profiles allowing its optimization. The influence of recombination in the multijunction structure are also analysed. Opto-electrical simulations demonstrate that optimal geometries and efficiencies are very similar for the two semiconductors used for the nanowires.