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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Calmeiro, Tomás
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Topics
Publications (10/10 displayed)
- 2022Observation of Grain Boundary Passivation and Charge Distribution in Perovskite Films Improved with Anti-solvent Treatmentcitations
- 2021Highly conductive grain boundaries in copper oxide thin films
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Mapping the space charge carrier dynamics in plasmon-based perovskite solar cellscitations
- 2018Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivitycitations
- 2017Oxide-Based Solar Cellcitations
- 2016Stress Induced Mechano-electrical Writing-Reading of Polymer Film Powered by Contact Electrification Mechanismcitations
- 2016Influence of the Substrate on the Morphology of Self-Assembled Silver Nanoparticles by Rapid Thermal Annealingcitations
- 2016Highly conductive grain boundaries in copper oxide thin filmscitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
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article
Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivity
Abstract
<p>Direct evidence for the presence of a CuO structure in the grain boundaries of Cu<sub>2</sub>O thin films by chemical vapor deposition is provided by high resolution automated phase and orientation mapping (ASTAR), which was not detectable by classical transmission electron microscopy techniques. Conductive atomic force microscopy (CAFM) revealed that the CuO causes a local loss of current rectification at the Schottky barrier between the CAFM tip and Cu<sub>2</sub>O. The suppression of CuO formation at the Cu<sub>2</sub>O grain boundaries is identified as the key strategy for future device optimization.</p>