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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Ullah, Shafi
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2024Improvement of optical and conductivity properties of SnS2 via Cr doping for photovoltaic applicationscitations
- 2023The tin doping effect on the physicochemical and nonlinear optical properties of the manganese oxide (Mn<sub>3</sub>O<sub>4</sub>: Sn) thin filmscitations
- 2023Optical, luminescence, photocurrent and structural properties of sol-gel ZnO fibrous structure thin films for optoelectronic applications: A combined experimental and DFT studycitations
- 2021Shedding Light on the Effect of Diethyl Ether Antisolvent on the Growth of (CH<SUB>3</SUB>NH<SUB>3</SUB>) PbI<SUB>3</SUB> Thin Filmscitations
- 2021Design and Optimization of Microwave Sensor for the Non-Contact Measurement of Pure Dielectric Materialscitations
- 2019Optoelectronic characterization of CuInGa(S)<SUB>2</SUB> thin films grown by spray pyrolysis for photovoltaic applicationcitations
- 2018Effect of Cu2O hole transport layer and improved minority carrier life time on the efficiency enhancement of Cu2NiSnS4 based experimental solar cellcitations
- 2017THIN FILM SOLAR CELLS BASED ON COPPER-INDIUMGALIUM SELENIDE (CIGS) MATERIALS DEPOSITED BY ELECTROCHEMICAL TECHNIQUEScitations
- 2016Electrodeposition of CuGaSe2 and CuGaS2 thin films for photovoltaic applicationscitations
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article
Effect of Cu2O hole transport layer and improved minority carrier life time on the efficiency enhancement of Cu2NiSnS4 based experimental solar cell
Abstract
<jats:p>C u 2 NiSn S 4 is a non-toxic earth abundant material and a promising quaternary semiconductor compound. Due to its optimum direct band gap, it has been considered as a suitable absorber material for photovoltaic cells. It is a conspicuous and suitable class of material for the fabrication of low cost and high efficiency thin film devices. This paper presents numerical modeling for the efficiency enhancement of Cu2NiSnS4 based experimental photovoltaic cells. In this work, the experimental cell results were reproduced in the SCAPS software. These simulated results are validated and compared with the experimental reference cell. Cu2O as the hole transport layer is also proposed for further efficiency enhancement of the photovoltaic cell. After optimization of cell parameters, the power conversion efficiency of an optimized device is increased up to 4.60%. By applying the hole transport layer and analyzing the minority carrier life time, the conversion efficiency increases up to 10.35%. This work presents a novel concept in numerical modeling by analyzing the experimental solar cell, which will categorically offer new directions for the fabrication of high efficiency photovoltaic devices.</jats:p>