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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dhanak, V. R.
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Topics
Publications (7/7 displayed)
- 2019Low temperature growth and optical properties of α-Ga2O3 deposited on sapphire by plasma enhanced atomic layer depositioncitations
- 2018Band alignments at Ga2O3 heterojunction interfaces with Si and Gecitations
- 2013Templated three-dimensional growth of quasicrystalline leadcitations
- 2011Study of interfaces and band offsets in TiN/amorphous LaLu=3 gate stackscitations
- 2010Experimental structure determination of the chemisorbed overlayers of chlorine and iodine on Au{111}citations
- 2005Low-coverage condensation of K on TiO 2 (1 1 0) 1 × 1citations
- 2001Structural and magnetic properties of self-assembled nanoscale Fe islands on Cu(100)citations
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article
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
Abstract
<jats:p>Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.</jats:p>