| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Roberts, Joseph
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020(Invited) Band Line-up of High-k Oxides on GaN
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2019Effect of HCl cleaning on InSb–Al<sub>2</sub>O<sub>3</sub> MOS capacitorscitations
- 2018Band alignments at Ga2O3 heterojunction interfaces with Si and Gecitations
- 2018Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by <i>in-situ</i> fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
- 2016Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta2O5)<i>x</i>(Al2O3)1−<i>x</i> as potential gate dielectrics for GaN/AlxGa1−xN/GaN high electron mobility transistorscitations
- 2016Control of threshold voltage in E-mode and D-mode GaN-on-Si metal-insulator-semiconductor heterostructure field effect transistors by in-situ fluorine doping of atomic layer deposition Al2O3 gate dielectricscitations
Places of action
| Organizations | Location | People |
|---|
article
Band alignments at Ga2O3 heterojunction interfaces with Si and Ge
Abstract
<jats:p>Amorphous Ga2O3 thin films were deposited on p-type (111) and (100) surfaces of silicon and (100) germanium by atomic layer deposition (ALD). X-ray photoelectron spectroscopy (XPS) was used to investigate the band alignments at the interfaces using the Kraut Method. The valence band offsets were determined to be 3.49± 0.08 eV and 3.47± 0.08 eV with Si(111) and Si(100) respectively and 3.51eV± 0.08 eV with Ge(100). Inverse photoemission spectroscopy (IPES) was used to investigate the conduction band of a thick Ga2O3 film and the band gap of the film was determined to be 4.63±0.14 eV. The conduction band offsets were found to be 0.03 eV and 0.05eV with Si(111) and Si(100) respectively, and 0.45eV with Ge(100). The results indicate that the heterojunctions of Ga2O3 with Si(100), Si(111) and Ge(100) are all type I heterojunctions.</jats:p>