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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Weeber, Arthur
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2021Design and optimization of hole collectors based on nc-SiOx:H for high-efficiency silicon heterojunction solar cellscitations
- 2021On current collection from supporting layers in perovskite/c-Si tandem solar cellscitations
- 2018Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cellscitations
- 2017Poly-Si(O)x passivating contacts for high-efficiency c-Si IBC solar cellscitations
- 2003Structural film characteristics related to the passivation properties of high-rate (> 0.5 nm/s) plasma deposited a-SiN x :H
- 2003Influence of the high-temperature "firing" step on high-rate plasma deposited silicon nitride films used as bulk passivating antireflection coatings on silicon solar cells
- 2002High-rate deposition of a-SiNx:H for photovoltaic applications by the expanding thermal plasma
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article
Poly-crystalline silicon-oxide films as carrier-selective passivating contacts for c-Si solar cells
Abstract
<p>The poly-Si carrier-selective passivating contacts (CSPCs) parasitically absorb a substantial amount of light, especially in the form of free carrier absorption. To minimize these losses, we developed CSPCs based on oxygen-alloyed poly-Si (poly-SiO<sub>x</sub>) and deployed them in c-Si solar cells. Transmission electron microscopy analysis indicates the presence of nanometer-scale silicon crystals within such poly-SiO<sub>x</sub> layers. By varying the O content during material deposition, we can manipulate the crystallinity of the poly-SiO<sub>x</sub> material and its absorption coefficient. Also, depending on the O content, the bandgap of the poly-SiO<sub>x</sub> material can be widened, making it transparent for longer wavelength light. Thus, we optimized the O alloying, doping, annealing, and hydrogenation conditions. As a result, an extremely high passivation quality for both n-type poly-SiO<sub>x</sub> (J<sub>0</sub> = 3.0 fA/cm<sup>2</sup> and iVoc = 740 mV) and p-type poly-SiO<sub>x</sub> (J<sub>0</sub> = 17.0 fA/cm<sup>2</sup> and iVoc = 700 mV) is obtained. A fill factor of 83.5% is measured in front/back-contacted solar cells with both polarities made up of poly-SiO<sub>x</sub>. This indicates that the carrier transport through the junction between poly-SiO<sub>x</sub> and c-Si is sufficiently efficient. To demonstrate the merit of poly-SiOx layers' high transparency at long wavelengths, they are deployed at the back side of interdigitated back-contacted (IBC) solar cells. A preliminary cell efficiency of 19.7% is obtained with much room for further improvement. Compared to an IBC solar cell with poly-Si CSPCs, a higher internal quantum efficiency at long wavelengths is observed for the IBC solar cell with poly-SiO<sub>x</sub> CSPCs, thus demonstrating the potential of poly-SiO<sub>x</sub> in enabling higher J<sub>SC</sub>.</p>