| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dickmann, Marcel
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Publications (7/7 displayed)
- 2024Positron lifetime study of ion-irradiated tungsten: Ion type and dose effectscitations
- 2021Porosimetry for Thin Films of Metal–Organic Frameworkscitations
- 2021Identification of lead vacancy defects in lead halide perovskitescitations
- 2020Solvent-Free Powder Synthesis and MOF-CVD Thin Films of the Large-Pore Metal-Organic Framework MAF-6citations
- 2020Morphology of Thin Film Composite Membranes Explored by Small-Angle Neutron Scattering and Positron-Annihilation Lifetime Spectroscopycitations
- 2018Annealing behavior of open spaces in AlON films studied by monoenergetic positron beamscitations
- 2017New insights into the nanostructure of innovative thin film solar cells gained by positron annihilation spectroscopycitations
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article
Annealing behavior of open spaces in AlON films studied by monoenergetic positron beams
Abstract
<jats:p>The impact of nitridation on open spaces in thin AlONx films deposited by a reactive sputtering technique was studied by using monoenergetic positron beams. For AlONx films with x = 0%–15%, positrons were found to annihilate from trapped states in open spaces, which coexist intrinsically in an amorphous structure with three different sizes. Nitrogen incorporation into the Al2O3 film increased the size of the open spaces, and their density increased as the post-deposition annealing temperature increased. The effect of nitrogen incorporation, however, diminished at x = 25%. The observed change in the network structure was associated with the formation of a stable amorphous structure, which we could relate to the electrical properties of AlONx/SiO2/Si gate stacks.</jats:p>