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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Nayak, Sanjay
Laboratori Guglielmo Marconi (Italy)
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (5/5 displayed)
- 2024Dynamic evolution of internal stress, grain growth, and crystallographic texture in arc-evaporated AlTiN thin films using in-situ synchrotron x-ray diffractioncitations
- 2023Variation in the electronic, mechanical, and structural properties among the polymorphs of bismuth ferrite: a first-principles approachcitations
- 2023In-situ real-time evolution of intrinsic stresses and microstructure during growth of cathodic arc deposited (Al,Ti)N coatings
- 2021Effect of disorder on superconductivity of NbN thin films studied using x-ray absorption spectroscopycitations
- 2018Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and <i>first-principles</i> studycitations
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article
Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and <i>first-principles</i> study
Abstract
<jats:p>We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped single crystalline wurtzite gallium nitride (w-GaN) nanorods (NRs) grown by MBE, using electron microscopy and first-principles Density Functional Theory calculations. Experimentally, we observe that Mg incorporation increases the surface coverage of the grown samples as a consequence of an increase in the radial growth rate of the NRs. We also observe that the coalescence of NRs becomes prominent and the height at which coalescence between proximal rods occurs decreases with increase in Mg concentration. From first-principles calculations, we find that the surface free energy of the Mg doped surface reduces with increasing Mg concentration in the samples. The calculations further suggest a reduction in the adsorption energy and the diffusion barrier of Ga adatoms along [112¯0] on the side wall surface of the NRs as the underlying mechanism for the observed enhancement in the radial growth rate of GaN NRs. The physics and chemistry behind reduction of the adsorption energy of Ga ad-atoms on the doped surface are explained in the light of electronic structure of the relevant surfaces.</jats:p>