| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ek, Martin
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (13/13 displayed)
- 2024Tribology and airborne particle emissions from grey cast iron and WC reinforced laser cladded brake discscitations
- 2023Impact of electron beam irradiation on Carbon Black Oxidation
- 2023High-Temperature Oxidation of Titanium Aluminium Nitride Coatings Visualized by Environmental Transmission Electron Microscopy
- 2022Synthesis, characterization, and challenges faced during the preparation of zirconium pillared clayscitations
- 2021Characterisation of worn WC tool using STEM-EDS aided by principal component analysiscitations
- 2021Synthesis and characterization of Au@Zn core@shell aerosol nanoparticles generated by spark ablation and on-line PVD
- 2020Complex Aerosol Nanostructures: Revealing the Phases from Multivariate Analysis on Elemental Maps Obtained by TEM-EDX
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2014GaAs/AlGaAs heterostructure nanowires studied by cathodoluminescencecitations
- 2013Analysis of Structure, Composition and Growth of Semiconductor Nanowires by Transmission Electron Microscopy
- 2013Combining axial and radial nanowire heterostructures: Radial Esaki diodes and tunnel field-effect transistorscitations
- 2012Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.citations
- 2011Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal qualitycitations
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article
Self-assembled InN quantum dots on side facets of GaN nanowires
Abstract
Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (.ABABCBC.) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.