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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Johansson, Jonas
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2024The need for nonuniform risk acceptability across climate change scenarioscitations
- 2021Improved quality of InSb-on-insulator microstructures by flash annealing into meltcitations
- 2021Surface energy driven miscibility gap suppression during nucleation of III-V ternary alloyscitations
- 2021Sintering Mechanism of Core@Shell Metal@Metal-Oxide Nanoparticlescitations
- 2021Aerotaxycitations
- 2020Pseudo-particle continuum modelling of nanowire growth in aerotaxy
- 2020Limits of III-V Nanowire Growth Based on Droplet Dynamicscitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2017Composition of Gold Alloy Seeded InGaAs Nanowires in the Nucleation Limited Regimecitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2016Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowirescitations
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2015Size- and shape-dependent phase diagram of In–Sb nano-alloyscitations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012Combinatorial Approaches to Understanding Polytypism in III-V Nanowires.citations
- 2011Growth of straight InAs-on-GaAs nanowire heterostructurescitations
- 2011Parameter space mapping of InAs nanowire crystal structurecitations
- 2010Control of III-V nanowire crystal structure by growth parameter tuningcitations
- 2009Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowirescitations
- 2008Effects of growth conditions on the crystal structure of gold-seeded GaP nanowirescitations
- 2008Focused ion beam fabrication of novel core-shell nanowire structurescitations
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article
Self-assembled InN quantum dots on side facets of GaN nanowires
Abstract
Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (.ABABCBC.) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.