| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lenrick, Filip
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (37/37 displayed)
- 2024Spatially resolved structural and chemical properties of the white layer in machined Inconel 718 super alloycitations
- 2024Diffusion Bonding 321-Grade Stainless Steel : Failure and Multimodal Characterization
- 2024Diffusion Bonding 321-Grade Stainless Steel
- 2024Effect of ageing on machining performance of grey cast iron and its compensation by cutting speed managementcitations
- 2024Machinability improvement by in-operando Tool Protection Layers through designed steel alloying : The case of manganese steelcitations
- 2024On wear of TiAlN coated tools with and without NbN overlayer in machining titanium alloyscitations
- 2023Predicting wear mechanisms of ultra-hard tooling in machining Ti6Al4V by diffusion couples and simulationcitations
- 2023High-Temperature Oxidation of Titanium Aluminium Nitride Coatings Visualized by Environmental Transmission Electron Microscopy
- 2022Performance and wear mechanisms of different PcBN tools when machining superalloy AD730citations
- 2022Influence of sub-surface deformation induced by machining on stress corrosion cracking in lead-free brasscitations
- 2022Understanding wear and interaction between CVD α-Al2O3 coated tools, steel, and non-metallic inclusions in machiningcitations
- 2022Multicomponent binders for PcBN performance enhancement in cutting tool applicationscitations
- 2021Performance and wear mechanisms of uncoated cemented carbide cutting tools in Ti6Al4V machiningcitations
- 2021Onset of the degradation of CVD α-Al2O3 coating during turning of Ca-treated steelscitations
- 2021Characterisation of worn WC tool using STEM-EDS aided by principal component analysiscitations
- 2021Evaluation of tool wear mechanisms and tool performance in machining single-phase tungstencitations
- 2021Wear mechanisms of PcBN tools when machining AISI 316Lcitations
- 2021Surface chemistry and diffusion of trace and alloying elements during in vacuum thermal deoxidation of stainless steelcitations
- 2020Performance and wear mechanisms of PCD and pcBN cutting tools during machining titanium alloy Ti6Al4Vcitations
- 2020On twinning in ultrahard nanocrystalline cubic boron nitride
- 2020Study of wear mechanisms of cemented carbide tools during machining of single-phase niobiumcitations
- 2019GaN nanowires as probes for high resolution atomic force and scanning tunneling microscopycitations
- 2019Scanning 3DXRD measurement of grain growth, stress, and formation of Cu6Sn5 around a tin whisker during heat treatmentcitations
- 2018Self-assembled InN quantum dots on side facets of GaN nanowirescitations
- 2018Tool Wear Mechanisms of pcBN tooling during High-Speed Machining of Gray Cast Ironcitations
- 2017Wear mechanisms of uncoated and coated cemented carbide tools in machining lead-free silicon brasscitations
- 2017Performance and wear mechanisms of novel superhard diamond and boron nitride based tools in machining Al-SiCp metal matrix compositecitations
- 2016Focused Ion Beam Preparation and Transmission Electron Microscopy of Materials for Energy Applications
- 2015Phase Transformation in Radially Merged Wurtzite GaAs Nanowires.citations
- 2015Growth parameter design for homogeneous material composition in ternary GaxIn1-xP nanowires.citations
- 2014Chemical solution deposition of thin films for protonic ceramic fuel cellscitations
- 2013Synthesis by spark plasma sintering of a novel protonic/electronic conductor composite: BaCe0.2Zr0.7Y0.1O3-delta /Sr0.95Ti0.9Nb0.1O3-delta (BCZY27/STN95)citations
- 2013Synthesis by spark plasma sintering of a novel protonic/electronic conductor composite: BaCe 0.2 Zr 0.7 Y 0.1 O 3−δ /Sr 0.95 Ti 0.9 Nb 0.1 O 3−δ (BCZY27/STN95)citations
- 2012Electron microscopy study of single crystal BaZr0.9Y0.1O3-x films prepared by chemical solution depositioncitations
- 2012High-Frequency Performance of Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFETcitations
- 2011High Transconductance Self-Aligned Gate-Last Surface Channel In0.53Ga0.47As MOSFET
- 2011Characterization of White Layer Generated when Turning Aged Inconel 718citations
Places of action
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article
Self-assembled InN quantum dots on side facets of GaN nanowires
Abstract
Self-assembled, atomic diffusion controlled growth of InN quantum dots was realized on the side facets of dislocation-free and c-oriented GaN nanowires having a hexagonal cross-section. The nanowires were synthesized by selective area metal organic vapor phase epitaxy. A 3 Å thick InN wetting layer was observed after growth, on top of which the InN quantum dots formed, indicating self-assembly in the Stranski-Krastanow growth mode. We found that the InN quantum dots can be tuned to nucleate either preferentially at the edges between GaN nanowire side facets, or directly on the side facets by tuning the adatom migration by controlling the precursor supersaturation and growth temperature. Structural characterization by transmission electron microscopy and reciprocal space mapping show that the InN quantum dots are close to be fully relaxed (residual strain below 1%) and that the c-planes of the InN quantum dots are tilted with respect to the GaN core. The strain relaxes mainly by the formation of misfit dislocations, observed with a periodicity of 3.2 nm at the InN and GaN hetero-interface. The misfit dislocations introduce I1 type stacking faults (.ABABCBC.) in the InN quantum dots. Photoluminescence investigations of the InN quantum dots show that the emissions shift to higher energy with reduced quantum dot size, which we attribute to increased quantum confinement.