• Seo, Deok Min
• Kumar, Pawan
• Kashyap, Pradeep Kumar
• Late, Dattatray J.
• More, Mahendra A.
• Nagpal, Kanika
• Gangwar, Amit Kumar
• Hahm, Myung Gwan
• Kedawat, Garima
• Suryawanshi, Sachin R.
• Singh, Satbir
• Srivastava, Shubhda
• Srivastava, O. N.
• Gupta, Bipin Kumar
• Tripathi, Prashant

Abstract

<jats:p>The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2–30 walls with an inner diameter of 3–8 nm. Raman spectrum analysis shows G-band at 1580 cm−1 and D-band at 1340 cm−1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.</jats:p>

Topics

• density
• impedance spectroscopy
• Carbon
• scanning electron microscopy
• nanotube
• aluminium
• Silicon
• iron
• current density
• chemical vapor deposition
• aligned