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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Sharps, Paul
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document
AlGaInP/GaAs Tandem Solar Cells for Power Conversion at 400 degrees C and High Concentration
Abstract
We demonstrate dual junction (Al)GaInP/GaAs solar cells that are designed to operate at 400 degrees C and 1000X concentration in a hybrid photovoltaic-solar thermal concentrator system. The cells have a front metallization and anti-reflection coating that are stable under 400 degrees C operation. We show how the cell performance degrades with increasing aluminum compositions in the top cell. Our best cell is a GaInP/GaAs tandem that demonstrated 15+/-1% efficiency at 400 degrees C over a concentration range of 300-1000 suns, with several pathways to improved performance.