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Moran, David
University of Glasgow
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2017Damage to Algan/Gan Power Device Materials from Cl2 and Ar Plasma Based Atomic Layer Etching and its Elimilation via a Low Temperature Rapid Thermal Annealing
- 2017High resolution structural characterisation of laser-induced defect clusters inside diamondcitations
- 2012Direct Nano-Patterning of Commercially Pure Titanium with Ultra-Nanocrystalline Diamond Stamps
- 2012Direct nanopatterning of commercially pure titanium with ultra-nanocrystalline diamond stampscitations
- 2012Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamondcitations
- 2009III-V MOSFET Fabrication and Device (Fabrication process of e.g. group III-V MOSFET for nano complementary metal oxide semiconductor application, involves heat treating metal contact structure to produce alloy region within semiconductor substrate)
- 2008Ino.75Gao.25As channel III–V MOSFETs with leading performance metrics
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article
High resolution structural characterisation of laser-induced defect clusters inside diamond
Abstract
Laser writing with ultrashort pulses provides a potential route for the manufacture of three-dimensional wires, waveguides, and defects within diamond. We present a transmission electron microscopy study of the intrinsic structure of the laser modifications and reveal a complex distribution of defects. Electron energy loss spectroscopy indicates that the majority of the irradiated region remains as sp3 bonded diamond. Electrically conductive paths are attributed to the formation of multiple nano-scale, sp2-bonded graphitic wires and a network of strain-relieving micro-cracks.