| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ohtomo, Akira
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2017Superconductivity in Ti<sub>4</sub>O<sub>7</sub> and γ-Ti<sub>3</sub>O<sub>5</sub> filmscitations
- 2017Epitaxial structure and electronic property of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown on MgO (100) substrates by pulsed-laser depositioncitations
- 2017Highly oriented epitaxial CaFe<sub>2</sub>O<sub>4</sub> thin films on TiO<sub>2</sub> substrates grown by pulsed-laser depositioncitations
- 2016Fabrication and Characterization of Semiconductor Photoelectrodes with Orientation-Controlled α-Fe<sub>2</sub>O<sub>3</sub> Thin Filmscitations
- 2016Strain-induced metal-insulator transition in <i>t</i><sub>2g</sub> electron system of perovskite titanate Sm<sub>0.5</sub>Ca<sub>0.5</sub>TiO<sub>3</sub> filmsscitations
- 2015Pulsed-laser deposition of superconducting LiTi<sub>2</sub>O<sub>4</sub> ultrathin films
- 2015Direct growth of metallic TiH<sub>2</sub> thin films by pulsed laser depositioncitations
- 2015Conducting Si-doped γ-Ga<sub>2</sub>O<sub>3</sub> epitaxial films grown by pulsed-laser depositioncitations
- 2014Graphoepitaxy of ZnO: novel selection rule of domain formation on nanopatterned glass surface
- 2013Surface and interface engineering of ZnO based heterostructures fabricated by pulsed-laser depositioncitations
- 2013Spontaneous atomic ordering and magnetism in epitaxially stabilized double perovskitescitations
- 2012Epitaxial structures of band-gap-engineered α-(Cr<sub>x</sub>Fe<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> (0 ≤x≤1) films grown on C-plane sapphirecitations
- 2012Spontaneous atomic ordering and magnetism in epitaxially stabilized double-perovskites
- 2011Ferrimagnetism and spontaneous ordering of transition metals in double perovskite La<sub>2</sub>CrFeO<sub>6</sub> filmscitations
- 2011Magnetic properties of Sr<sub>2</sub>FeTaO<sub>6</sub> double perovskite epitaxially grown by pulsed-laser depositioncitations
- 2010Dimensionality-driven insulator–metal transition in A-site excess non-stoichiometric perovskitescitations
- 2010Optimization of the Growth Conditions for Molecular Beam Epitaxy of Mg<sub>x</sub>Zn<sub>1-x</sub>O (0≤x≤0.12) Films on Zn-Polar ZnO Substratescitations
- 2010Controlled B-site ordering in Sr<SUB>2</SUB>CrReO<SUB>6</SUB> double perovskite films by using pulsed laser interval depositioncitations
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article
Epitaxial structure and electronic property of <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> films grown on MgO (100) substrates by pulsed-laser deposition
Abstract
We investigated heteroepitaxial growth of Si-doped Ga2O3 films on MgO (100) substrates by pulsed-laser deposition as a function of growth temperature (Tg) to find a strong correlation between the structural and electronic properties. The films were found to contain cubic γ-phase and monoclinic β-phase, the latter of which indicated rotational twin domains when grown at higher Tg. The formation of the metastable γ-phase and twin-domain structure in the stable β-phase are discussed in terms of the in-plane epitaxial relationships with a square MgO lattice, while crystallinity of the β-phase degraded monotonically with decreasing Tg. The room-temperature conductivity indicated a maximum at the middle of Tg, where the β-Ga2O3 layer was relatively highly crystalline and free from the twin-domain structure. Moreover, both crystallinity and conductivity of β-Ga2O3 films on the MgO substrates were found superior to those on α-Al2O3 (0001) substrates. A ratio of the conductivity, attained to the highest quantity on each substrate, was almost three orders of magnitude.