| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Ettlinger, Rebecca Bolt
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2018Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfercitations
- 2018Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfercitations
- 2017Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser depositioncitations
- 2016CTS and CZTS for solar cells made by pulsed laser deposition and pulsed electron deposition
- 2015Pulsed laser deposition from ZnS and Cu 2 SnS 3 multicomponent targetscitations
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu2ZnSnS4 by spectroscopic ellipsometrycitations
- 2015Pulsed laser deposition from ZnS and Cu2SnS3 multicomponent targetscitations
- 2015Chalcogenide compounds made by pulsed laser deposition at 355 and 248 nm
- 2015Morphology of Copper Tin Sulfide Films Grown by Pulsed Laser Deposition at 248 and 355 nm
- 2015Optical properties and surface characterization of pulsed laser-deposited Cu 2 ZnSnS 4 by spectroscopic ellipsometrycitations
- 2015ZnS top layer for enhancement of the crystallinity of CZTS absorber during the annealingcitations
- 2014Thin films of absorber material Cu2ZnSnS4 for solar cells
- 2014Optical properties and secondary phase identification in PLD-grown Cu 2 ZnSnS 4 for thin-film photovoltaics
- 2014Optical properties and secondary phase identification in PLD-grown Cu2ZnSnS4 for thin-film photovoltaics
- 2014Nanosecond laser ablation and deposition of silver, copper, zinc and tincitations
- 2014Pulsed laser deposition of Cu-Sn-S for thin film solar cells
Places of action
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article
Temperature dependent photoreflectance study of Cu2SnS3 thin films produced by pulsed laser deposition
Abstract
The energy band structure of Cu2SnS3 (CTS) thin films fabricated by pulsed laser deposition was studied by photoreflectance spectroscopy (PR). The temperature-dependent PR spectra were measured in the range of T = 10–150 K. According to the Raman scattering analysis, the monoclinic crystal structure (C1c1) prevails in the studied CTS thin film; however, a weak contribution from cubic CTS (F-43m) was also detected. The PR spectra revealed the valence band splitting of CTS. Optical transitions at EA = 0.92 eV, EB = 1.04 eV, and EC = 1.08 eV were found for monoclinic CTS at low-temperature (T = 10 K). Additional optical transition was detected at EAC = 0.94 eV, and it was attributed to the low-temperature band gap of cubic CTS. All the identified optical transition energies showed a blueshift with increasing temperature, and the temperature coefficient dE/dT was about 0.1 meV/K.