• Mändl, Stephan
• Rauschenbach, Bernd
• Mensing, Michael
• Varga, Aron
• Finzel, Annemarie
• Hatahet, M. Hamza
• Lehnert, Jan
• Spemann, Daniel

Abstract

<jats:p>In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ∼900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.</jats:p>

Topics

• impedance spectroscopy
• Carbon
• scanning electron microscopy
• atomic force microscopy
• copper
• Silicon
• etching
• defect
• optical microscopy
• Raman spectroscopy