| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Rauschenbach, Bernd
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2020Biaxially Textured Titanium Thin Films by Oblique Angle Deposition: Conditions and Growth Mechanisms
- 2020Structural Transitions in Ge2Sb2Te5 Phase Change Memory Thin Films Induced by Nanosecond UV Optical Pulses
- 2019Influence of substrate dimensionality on the growth mode of epitaxial 3D-bonded GeTe thin films: From 3D to 2D growth
- 2018Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures
- 2017Ion Beam Assisted Deposition of Thin Epitaxial GaN Films
- 2017Ion Beam Assisted Deposition of Thin Epitaxial GaN Filmscitations
- 2017Glancing angle deposition of sculptured thin metal films at room temperature
- 2017Research Update: Van-der-Waals epitaxy of layered chalcogenide Sb2Te3 thin films grown by pulsed laser deposition
- 2017Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfercitations
- 2016Local atomic arrangements and lattice distortions in layered Ge-Sb-Te crystal structures
- 2016Crystallization of Ge2Sb2Te5 thin films by nano- and femtosecond single laser pulse irradiation
- 2015Highly sensitive and specific detection of E. coli by a SERS nanobiosensor chip utilizing metallic nanosculptured thin films
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article
Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer
Abstract
<jats:p>In this work, a synthesis method for the growth of low-defect large-area graphene using carbon ion beam implantation into metallic Cu foils is presented. The Cu foils (1 cm2 in size) were pre-annealed in a vacuum at 950 °C for 2 h, implanted with 35 keV carbon ions at room temperature, and subsequently annealed at 850 °C for 2 h to form graphene layers with the layer number controlled by the implantation fluence. The graphene was then transferred to SiO2/Si substrates by a PMMA-free wet chemical etching process. The obtained regions of monolayer graphene are of ∼900 μm size. Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and optical microscopy performed at room temperature demonstrated a good quality and homogeneity of the graphene layers, especially for monolayer graphene.</jats:p>