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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Marchet, Pascal
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (38/38 displayed)
- 2024Effect of post-annealing on microstructure and electrical properties of BaTiO3 thick films grown by Aerosol Deposition (AD)citations
- 2023(K0.5Bi0.5)ZrO3 (KBZ) lead-free perovskite compound: Structural study and physical propertiescitations
- 2022Synthesis of 0.94 Na0.5Bi0.5TiO3 – 0.06 BaTiO3 (NBT-6BT) lead-free piezoelectric powder suitable for aerosol deposition (AD)citations
- 2022Comparative Study on Electrical Conductivity of CeO2-Doped AlN Ceramics Sintered by Hot-Pressing and Spark Plasma Sinteringcitations
- 2021Relationship between structural and dielectric properties of Znsubstituted Ba5CaTi2−xZnxNb8O30 tetragonal tungsten bronzecitations
- 2021Structural and impedance spectroscopic study of Zn-substituted Ba5CaTi2Nb8O30 tetragonal tungsten bronze ceramicscitations
- 2020Elaboration and Characterization of Materials from the LaMnO 3 –BiMnO 3 Binary Systemcitations
- 2020Influence of microwave sintering on electrical properties of BCTZ lead free piezoelectric ceramicscitations
- 2020Texturation of lead-free BaTiO 3 based piezoelectric ceramics ; Texturation of lead-free BaTiO 3 based piezoelectric ceramics: [Invited]
- 2020Relationships between crystalline structure and dielectric properties in Sr 2 Sm (1-x) Nd x Ti 2 Nb 3 O 15 ceramics
- 2020[Invited] Texturation of lead-free BaTiO 3 based piezoelectric ceramics ; [Invited] Texturation of lead-free BaTiO 3 based piezoelectric ceramics: [Invited]
- 2019Structure and properties of (Na0.5Bi0.5)ZrO3 (NBZ) lead-free perovskite compoundcitations
- 2019Texturation of lead-free BaTiO 3 based piezoelectric ceramics
- 2018Composite microstructures and piezoelectric properties in tantalum substituted lead-free K 0.5 Na 0.5 Nb 1-x Ta x O 3 ceramicscitations
- 2018Spinodal decomposition in lead-free piezoelectric BaTiO3–CaTiO3–BaZrO3 crystalscitations
- 2018Spinodal Decomposition in Lead-free Piezoelectric BaTiO3 –CaTiO3 –BaZrO3 Crystalscitations
- 2018Theoretical electroelastic modili of porous textured piezoceramics
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2017Effect of Ta on structure, microstructure and properties of K0.5Na0.5NbO3 ceramics sintered by various techniques
- 2016Aging behavior in Co doped barium titanate ceramicscitations
- 2016Elaboration of lead-free Na0.5Bi0.5TiO3–BaTiO3 (NBT-BT) thick films by aerosol deposition method (ADM)citations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel techniquecitations
- 2016Effects of Mn, Co, Ta and La doping on microstructure and piezoelectric properties of K0.5Na0.5NbO3 ceramics sintered by various technics
- 2016BST thin film capacitors integrated within a frequency tunable antenna
- 2015MICROCRYSTALLINE CELLULOSE AS A GREEN WAY FOR SUBSTITUTING BaTiO 3 IN DIELECTRIC COMPOSITES AND IMPROVING THEIR DIELECTRIC PROPERTIES
- 2015Dense and highly textured coatings obtained by aerosol deposition method from Ti3SiC2 powder: Comparison to a dense material sintered by Spark Plasma Sinteringcitations
- 2014Texturation of lead-free BaTiO3-based piezoelectric ceramics
- 2014Growth of dense Ti3SiC2 MAX phase films elaborated at room temperature by aerosol deposition methodcitations
- 2013Structure, microstructure and electrical properties of Cu2+ doped (K,Na,Li)(Nb,Ta,Sb)O3 piezoelectric ceramicscitations
- 2013{111}-textured BaTiO 3 ceramics elaborated by Templated Grain Growth using NaNbO 3 templatescitations
- 2012Structure and electrical properties in the K1/2Bi1/2TiO3-K1/2Bi1/2ZrO3 solid solution (KBT-KBZ)citations
- 2012Structure and electrical properties in the K1/2Bi1/2TiO3-K1/2Bi1/2ZrO3 solid solution (KBT-KBZ)citations
- 2012Electrical properties of (110) epitaxial lead free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition : macroscopic and nanoscale datacitations
- 2012Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates
- 2012Epitaxial growth and properties of lead-free ferroelectric Na0.5Bi0.5TiO3 thin films grown by pulsed laser deposition on various single crystal substrates
- 2010Macroscopic and nanoscale electrical properties of pulsed laser deposited (100) epitaxial lead-free Na0.5Bi0.5TiO3 thin filmscitations
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article
Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency range
Abstract
Domain wall motions in ferroelectrics participate to the material's complex permittiv-ity and are responsible for their sensitivity of the dielectric properties to the driving electric field and thus to the incident power at microwave frequencies. In the present study, the dependence of the permittivity, the dielectric losses and the tunability of Ba<sub>2/3</sub> Sr<sub>1/3</sub>TiO<sub>3</sub> (BST) thin films on the incident power and on the bias fields is examined at a frequency of 500 MHz. While, the domain wall motion participates only slightly to the permittivity (< 5 %), it strongly influences the losses due to its very dissipative behavior. As a consequence, the Figure of Merit (FoM , ratio between tunability and dielectric losses) of the material depends on the applied microwave power. In the present study, a decrease of the FoM from 29 to 21 is observed for an incident power varying from −20 dBm to 5 dBm. When characterizing ferroelectric materials, the incident power has to be considered; moreover, domain wall motion effects should be limited in order to achieve a high FoM and less power sensitivity.