| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Lhuillier, Emmanuel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (26/26 displayed)
- 2024Advancing the Coupling of III-V Quantum Dots to Photonic Structures to Shape Their Emission Diagramcitations
- 2024The Electronic Impact of Light-Induced Degradation in CsPbBr3 Perovskite Nanocrystals at Gold Interfacescitations
- 2024THz scanning near-field microscopy of HgTe nanocrystals
- 2023Unidirectional Rashba spin splitting in single layer WS<sub>2(1−x)</sub>Se<sub>2x</sub> alloycitations
- 2023Unidirectional Rashba Spin Splitting in Single Layer WS2(1-x)Se2x alloycitations
- 2022Chiral Helices Formation by Self-Assembled Molecules on Semiconductor Flexible Substratescitations
- 2022Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxycitations
- 2022Critical role of water on the synthesis and gelling of gamma-In2S3 nanoribbons with giant aspect ratio
- 2022Colloidal II–VI—Epitaxial III–V heterostructure: A strategy to expand InGaAs spectral responsecitations
- 2021Indirect to direct band gap crossover in two-dimensional WS2(1−x)Se2x alloyscitations
- 2021Indirect to direct band gap crossover in two-dimensional WS 2(1-x) Se 2x alloys
- 2020A nanoplatelet-based light emitting diode and its use for all-nanocrystal LiFi-like communicationcitations
- 2020Time Resolved Photoemission to Unveil Electronic Coupling Between Absorbing and Transport Layers in a Quantum Dot Based Solar Cellcitations
- 2020Interactions Between Topological Defects and Nanoparticlescitations
- 2020Pushing absorption of perovskite nanocrystals into the infraredcitations
- 2020Pushing absorption of perovskite nanocrystals into the infraredcitations
- 2019Nanophotonic approaches for integrated quantum photonics
- 2019Halide Ligands to Release Strain in Cadmium Chalcogenide Nanoplatelets and Achieve High Brightnesscitations
- 2018Fine structure of excitons and electron–hole exchange energy in polymorphic CsPbBr 3 single nanocrystalscitations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )citations
- 2017Probing Charge Carrier Dynamics to Unveil the Role of Surface Ligands in HgTe Narrow Band Gap Nanocrystalscitations
- 2017Electronic structure of CdSe-ZnS 2D nanoplateletscitations
- 2016van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Propertiescitations
- 2016Phototransport in colloidal nanoplatelets arraycitations
- 2011Thermal properties of mid-infrared colloidal quantum dot detectorscitations
Places of action
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article
Electronic structure of CdSe-ZnS 2D nanoplatelets
Abstract
International audience ; Among colloidal nanocrystals, 2D nanoplatelets (NPLs) made of cadmium chalcogenides have led to especially well controlled optical features. However, the growth of core shell heterostructures has so far been mostly focused on CdS shells, while more confined materials will be more promising to decouple the emitting quantum states of the core from their external environment. Using k·p simulation, we demonstrate that a ZnS shell reduces by a factor 10 the leakage of the wavefunction into the surrounding medium. Using X-ray photoemission (XPS), we confirm that the CdSe active layer is indeed unoxidized. Finally, we build an effective electronic spectrum for these CdSe/ZnS NPLs on an absolute energy scale which is a critical set of parameters for the future integration of this material into optoelectronic devices. We determine the work function (WF) to be 4.47 eV while the material is behaving as an n-type semiconductor.