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The influence of N2 flow rate on Ar and Ti Emission in high-pressure magnetron sputtering system plasma
Abstract
For ionized physical vapor deposition (known as IPVD) technique, investigation on the ionization mechanism of titanium atoms is very important during the deposition of titanium nitride (TiN) thin film using reactive magnetron sputtering plasma. The introduction of nitrogen gas into the chamber discharge leads to modifications of plasma parameters and ionization mechanism of transition species. In this work, an investigation on the influence of nitrogen flow rate on spectrum properties of argon and titanium during the deposition process have been carried out. The experimental configuration consists of OES and structure of magnetron sputtering device with the turbo molecular pump. A high-pressure magnetron sputtering plasma was used as plasma discharge chamber with various flow rate of nitrogen gas. Optical emission spectroscopy (OES) measurements were employed as plasma diagnostics tool in magnetron sputtering plasma operated at relatively high pressure. OES is a non-invasive plasma diagnostics method and ...