| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bertaina, Sylvain
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Interplay between magnetisation dynamics and structure in MnCoGe thin films
- 2023Competitive actions of MnSi in the epitaxial growth of Mn5Si3 thin films on Si(111)citations
- 2023Competitive actions of MnSi in the epitaxial growth of Mn5Si3 thin films on Si(111)citations
- 2023Magnetic moment impact on spin-dependent Seebeck coefficient of ferromagnetic thin filmscitations
- 2018Measuring Motional Dynamics of [(CH 3 ) 2 NH 2 ] + in the Perovskite-Like Metal–Organic Framework [(CH 3 ) 2 NH 2 ][Zn(HCOO) 3 ]: The Value of Low-Frequency Electron Paramagnetic Resonancecitations
- 2018Magneto-Structural and Computational Study of a Tetranuclear Copper Complex Displaying Carbonyl-π Interactionscitations
- 2017High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reactioncitations
- 2017Structural and Composition Effects on Electronic and Magnetic Properties in Thermoelectric Mn1– x–yCo1+xGe1+y Materialscitations
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article
High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction
Abstract
Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with 0.1 x 0.2. NDR appears as a CMOS-compatible efficient method to produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films.