693.932 PEOPLE
| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Makkonen, Ilja
University of Helsinki
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2022A combined experimental and theoretical study of small and large vacancy clusters in tungstencitations
- 2020Source/Drain Materials for Ge nMOS Devices: Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Segregation of Ni at early stages of radiation damage in NiCoFeCr solid solution alloyscitations
- 2020Ti-Sr antisitecitations
- 2020Ti-Sr antisite : An abundant point defect in SrTiO3citations
- 2020Source/Drain Materials for Ge nMOS Devices : Phosphorus Activation in Epitaxial Si, Ge, Ge1-xSnx and SiyGe1-x-ySnxcitations
- 2020Source/Drain Materials for Ge nMOS Devicescitations
- 2019Evolution of phosphorus-vacancy clusters in epitaxial germaniumcitations
- 2019Ga vacancies and electrical compensation in beta-Ga2O3 thin films studied with positron annihilation spectroscopycitations
- 2019Heavily phosphorus doped germanium:Strong interaction of phosphorus with vacancies and impact of tin alloying on doping activationcitations
- 2019Ga vacancies and electrical compensation in β-Ga 2 O 3 thin films studied with positron annihilation spectroscopycitations
- 2017Positron annihilation analysis of the atomic scale changes in oxidized Zircaloy-4 samplescitations
- 2016Review-Defect Identification with Positron Annihilation Spectroscopy in Narrow Band Gap Semiconductorscitations
- 2016Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germaniumcitations
- 2015Increased p-type conductivity in GaNxSb1-x, experimental and theoretical aspectscitations
- 2007Modeling momentum distributions of positron annihilation radiation in solids ; Positroniannihilaatiosäteilyn liikemääräjakaumat kiinteissä aineissa: elektronirakenneohjelmiin perustuva mallinnuscitations
Places of action
| Organizations | Location | People |
|---|
article
Electrical compensation via vacancy-donor complexes in arsenic-implanted and laser-annealed germanium
Abstract
Highly n-type Ge attained by shallow As implantation and excimer laser annealing was studied with positron annihilation spectroscopy and theoretical calculations. We conclude that a high concentration of vacancy-arsenic complexes was introduced by the doping method, while no sign of vacancies was seen in the un-implanted laser-annealed samples. The arsenic bound to the complexes contributes substantially to the passivation of the dopants. Published by AIP Publishing.