| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Schroeder, T.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (21/21 displayed)
- 2022NaOCl Application after Acid Etching and Retention of Cervical Restorations: A 3-Year Randomized Clinical Trial
- 2017Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching propertiescitations
- 2017Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties
- 2017Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties
- 2017Exceptional thermal strain reduction by a tilting pillar architecture: Suspended Ge layers on Si (001)citations
- 2016Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)citations
- 2016Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAMcitations
- 2015Ternary and quaternary Ni(Si)Ge(Sn) contact formation for highly strained Ge p- and n-MOSFETscitations
- 2015Engineered coalescence of three-dimensional Ge microcrystals into high-quality suspended layers on Si pillars
- 2015Ba termination of Ge(001) studied with STM
- 2015Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopycitations
- 2015Engineered Coalescence by Annealing 3D Ge Microstructures into High-Quality Suspended Layers on Sicitations
- 2014Structural Changes of Ultrathin $mathrm{Cub-PrO_2(111)/Si(111)}$ Films Due to Thermally Induced Oxygen Desorptioncitations
- 2014Towards forming-free resistive switching in oxygen engineered $HfO_{2−x}$citations
- 2013Surface morphology of ultrathin $hex-Pr_{2}O-{3}$ films on Si(1 1 1)citations
- 2012Hard X-ray Photoelectron Spectroscopy study of the electroforming in $Ti/HfO_{2}$-based resistive switching structurescitations
- 2011Post deposition annealing of praseodymia films on Si(111) at low temperaturescitations
- 2011Atomic-scale engineering of future high-k dynamic random access memory dielectricscitations
- 2009Postdeposition annealing induced transition from hexagonal $Pr_2O_3$ to cubic $PrO_2$ films on Si(111)citations
- 2009Defect structure of Ge(111)/cubic Pr2O3(111)/Si(111) heterostructures: Thickness and annealing dependencecitations
- 2009Postdeposition annealing induced transition from hexagonal Pr2O3 to cubic PrO2 films on Si(111)citations
Places of action
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article
Impact of oxygen stoichiometry on electroforming and multiple switching modes in TiN/TaOx/Pt based ReRAM
Abstract
We have investigated the material and electrical properties of tantalum oxide thin films (TaOx) with engineered oxygen contents grown by RF-plasma assisted molecular beam epitaxy. The optical bandgap and the density of the TaOx films change consistently with oxygen contents in the range of 3.63 to 4.66 eV and 12.4 to 9.0 g/cm3, respectively. When exposed to atmosphere, an oxidized Ta2O5-y surface layer forms with a maximal thickness of 1.2 nm depending on the initial oxygen deficiency of the film. X-ray photoelectron spectroscopy studies show that multiple sub-stoichiometric compositions occur in oxygen deficient TaOx thin films, where all valence states of Ta including metallic Ta are possible. Devices of the form Pt/Ta2O5-y/TaOx/TiN exhibit highly tunable forming voltages of 10.5 V to 1.5 V with decreasing oxygen contents in TaOx. While a stable bipolar resistive switching (BRS) occurs in all devices irrespective of oxygen content, unipolar switching was found to coexist with BRS only at higher oxygen contents, which transforms to a threshold switching behaviour in the devices grown under highest oxidation.