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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Das, Malay K.
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Publications (6/6 displayed)
- 2017Effects of Ni doping induced band modification and Ni3Se2nanoinclusion on thermoelectric properties of PbSecitations
- 2016Li-ion transport, structural and thermal studies on lithium triflate and barium titanate incorporated poly(vinylidene fluoride-co-hexafluoropropene) based polymer electrolytecitations
- 2016Exploring the doping effects of copper on thermoelectric properties of lead selenidecitations
- 2016Boost in room temperature thermoelectric performance of PbSecitations
- 2016Mangifera indica, Ficus religiosa and Polyalthia longifolia leaf extract-assisted green synthesis of graphene for transparent highly conductive filmcitations
- 2016Short carbon fiber-reinforced polycarbonate compositescitations
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article
Boost in room temperature thermoelectric performance of PbSe
Abstract
<p>Optimization of the transport properties of PbSe to maximize its thermoelectric performance at room temperature has been achieved through a combination of elemental doping and low densification. Al doped PbSe (PbSe:Al<sub>x</sub>; 0 ≤ x ≤ 0.06) with both lattice substitutional (Pb site) and interstitial occupation has been synthesized through solid state reaction. High Seebeck coefficient of ∼300 to 400 μV/K is noticed at 300 to 500 K. This, combined with the lower thermal conductivity of ∼1.20 W/m K, provides an improved ZT value as high as ∼0.67 at 300 K to the PbSe:Al<sub>x</sub> Also, by substituting Al in PbSe, maximum power factors of ∼20 to 26.6 μW/cm K<sup>2</sup> at 310 K are produced. The high room temperature thermoelectric performance of PbSe:Al<sub>x</sub> has been attributed to the mix contribution of the Al impurity states and the low densification. The strategy may be utilized to cost effective development of the low working temperature thermoelectric devices.</p>