Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (1/1 displayed)

  • 2016Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy3citations

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Chart of shared publication
Ikuhara, Yuichi
1 / 9 shared
Shibata, Naoya
1 / 7 shared
Okunishi, Eiji
1 / 4 shared
Mizoguchi, Teruyasu
1 / 4 shared
Nakamura, Atsutomo
1 / 5 shared
Chart of publication period
2016

Co-Authors (by relevance)

  • Ikuhara, Yuichi
  • Shibata, Naoya
  • Okunishi, Eiji
  • Mizoguchi, Teruyasu
  • Nakamura, Atsutomo
OrganizationsLocationPeople

document

Atomic structure characterization of stacking faults on the {1100 } plane in α-alumina by scanning transmission electron microscopy

  • Ikuhara, Yuichi
  • Shibata, Naoya
  • Okunishi, Eiji
  • Mizoguchi, Teruyasu
  • Nakamura, Atsutomo
  • Tochigi, Eita
Abstract

<p>The structure of a b=&lt;1100&gt; dislocation formed in the {1100}&lt;1120&gt; 2° low-angle grain boundary of alumina was observed by scanning transmission electron microscopy (STEM). It was found that the &lt;1100&gt; dislocation dissociate-s into 1/3&lt;1100&gt; partial-dislocation triplets with two stacking faults on the { 1100 } plane. The atomic structure of the { 1100 } stacking faults was characterized by annular bright field STEM (ABF-STEM). The two stacking faults were found to have a stacking sequence of ...ABCCABC... and ...ABCBCAB..., which is consistent with a former report. ABF-STEM image simulation was performed using structure models with the {1100} stacking faults optimized by first-principles calculations. The overall features of the experimental and the simulated results agree with each other. However, slight differences in contrast were recognized in the vicinity of the stacking faults, suggesting that there are small differences between the observed structures and the theoretical models.</p>

Topics
  • impedance spectroscopy
  • grain
  • grain boundary
  • simulation
  • transmission electron microscopy
  • dislocation
  • stacking fault