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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Martins, Jorge
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Formulation and Characterization of a Composite Coating Formulation Based on Acrylic Foam and Cork Granules
- 2022Foldable and Recyclable Iontronic Cellulose Nanopaper for Low-Power Paper Electronicscitations
- 2022Foldable and Recyclable Iontronic Cellulose Nanopaper for Low-Power Paper Electronicscitations
- 2021Handwritten and Sustainable Electronic Logic Circuits with Fully Printed Paper Transistorscitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 2021Towards Sustainable Crossbar Artificial Synapses with Zinc-Tin Oxidecitations
- 20202D Resistive Switching Based on Amorphous Zinc–Tin Oxide Schottky Diodescitations
- 2020Piezoelectricity Enhancement of Nanogenerators Based on PDMS and ZnSnO3 Nanowires through Microstructurationcitations
- 2020Rail-to-Rail Timing Signals Generation Using InGaZnO TFTs for Flexible X-Ray Detectorcitations
- 2016Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistorscitations
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article
Improving positive and negative bias illumination stress stability in parylene passivated IGZO transistors
Abstract
<p>The impact of a parylene top-coating layer on the illumination and bias stress instabilities of indium-gallium-zinc oxide thin-film transistors (TFTs) is presented and discussed. The parylene coating substantially reduces the threshold voltage shift caused by continuous application of a gate bias and light exposure. The operational stability improves by 75%, and the light induced instability is reduced by 35%. The operational stability is quantified by fitting the threshold voltage shift with a stretched exponential model. Storage time as long as 7 months does not cause any measurable degradation on the electrical performance. It is proposed that parylene plays not only the role of an encapsulation layer but also of a defect passivation on the top semiconductor surface. It is also reported that depletion-mode TFTs are less sensitive to light induced instabilities. This is attributed to a defect neutralization process in the presence of free electrons.</p>