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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Carta, Daniela
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2024A sol-gel templating route for the synthesis of hierarchical porous calcium phosphate glasses containing zinccitations
- 2024Wound Healing Promotion via Release of Therapeutic Metallic Ions from Phosphate Glass Fibers: An In Vitro and Ex Vivo Studycitations
- 2017The water gas shift reaction over Pt–CeO2 nanoparticles confined within mesoporous SBA-16citations
- 2017Water Gas Shift Reaction over Pt-CeO2 Nanoparticles Confined within Mesoporous SBA-16citations
- 2017Cation distribution and vacancies in nickel cobaltitecitations
- 2016Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopycitations
- 2016X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devicescitations
- 2016An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margincitations
- 2016Engineering the switching dynamics of TiOx-based RRAM with Al dopingcitations
- 2016Copper‐Based Catalysts Supported on Highly Porous Silica for the Water Gas Shift Reactioncitations
- 2016Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
- 2012Exploring the effect of co doping in fine maghemite nanoparticlescitations
- 2008A high-energy X-ray diffraction, P-31 and B-11 solid-state NMR study of the structure of aged sodium borophosphate glassescitations
- 2007The structure and properties of silver-doped phosphate-based glassescitations
- 2007Structural characterization study of FeCo alloy nanoparticles in a highly porous aerogel silica matrixcitations
- 2007Structural study of highly porous nanocomposite aerogelscitations
- 2007An x-ray diffraction study of the structure of Bioglass and its sol-gel analogue as a function of composition
- 2006The use of advanced diffraction methods in the study of the structure of a bioactive calcia: silica sol-gel glasscitations
Places of action
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article
Engineering the switching dynamics of TiOx-based RRAM with Al doping
Abstract
Titanium oxide (TiO<sub>x</sub>) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO<sub>x</sub> thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9V. This work demonstrates a potential pathway for implementing low-power RRAM systems.