| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Prodromakis, Themistoklis
University of Edinburgh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2024Solid polymer electrolytes with enhanced electrochemical stability for high-capacity aluminum batteriescitations
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Forming-free and non-linear resistive switching in bilayer HfO x /TaO x memory devices by interface-induced internal resistancecitations
- 2022Low-power supralinear photocurrent generation via excited state fusion in single-component nanostructured organic photodetectorscitations
- 2022Nanocellulose-based flexible electrodes for safe and sustainable energy storage
- 2020Poly(N-isopropylacrylamide) based thin microgel films for use in cell culture applicationscitations
- 2019An electrical characterisation methodology for identifying the switching mechanism in TiO2 memristive stackscitations
- 2019A digital in-analogue out logic gate based on metal-oxide memristor devices
- 2018Processing big-data with memristive technologiescitations
- 2018A comprehensive technology agnostic RRAM characterisation protocol
- 2018Interface barriers at Metal – TiO2 contacts
- 2018Electrothermal deterioration factors in gold planar inductors designed for microscale bio-applicationscitations
- 2017Impact of ultra-thin Al2O3–y layers on TiO2–x ReRAM switching characteristicscitations
- 2017Impact of ultra-thin Al 2 O 3–y layers on TiO 2–x ReRAM switching characteristicscitations
- 2016Spatially resolved TiOx phases in switched RRAM devices using soft X-ray spectromicroscopycitations
- 2016X-ray spectromicroscopy investigation of soft and hard breakdown in RRAM devicescitations
- 2016An amorphous titanium dioxide metal insulator metal selector device for resistive random access memory crossbar arrays with tunable voltage margincitations
- 2016Engineering the switching dynamics of TiOx-based RRAM with Al dopingcitations
- 2016Al-doping engineered electroforming and switching dynamics of TiOx ReRAM devices
- 2016Role and optimization of the active oxide layer in TiO2-based RRAMcitations
- 2016Engineering PDMS topography on microgrooved Parylene C
- 2009Engineering the Maxwell-Wagner polarization effectcitations
- 2009Application of gold nanodots for Maxwell-Wagner loss reduction
Places of action
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article
Engineering the switching dynamics of TiOx-based RRAM with Al doping
Abstract
Titanium oxide (TiO<sub>x</sub>) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO<sub>x</sub> thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9V. This work demonstrates a potential pathway for implementing low-power RRAM systems.