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| Naji, M. |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Calmeiro, Tomás
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2022Observation of Grain Boundary Passivation and Charge Distribution in Perovskite Films Improved with Anti-solvent Treatmentcitations
- 2021Highly conductive grain boundaries in copper oxide thin films
- 2019Hybrid (Ag)ZnO/Cs/PMMA nanocomposite thin filmscitations
- 2019Mapping the space charge carrier dynamics in plasmon-based perovskite solar cellscitations
- 2018Visualization of nanocrystalline CuO in the grain boundaries of Cu2O thin films and effect on band bending and film resistivitycitations
- 2017Oxide-Based Solar Cellcitations
- 2016Stress Induced Mechano-electrical Writing-Reading of Polymer Film Powered by Contact Electrification Mechanismcitations
- 2016Influence of the Substrate on the Morphology of Self-Assembled Silver Nanoparticles by Rapid Thermal Annealingcitations
- 2016Highly conductive grain boundaries in copper oxide thin filmscitations
- 2015Morphological and optical characterization of transparent thin films obtained at low temperature using ZnO nanoparticles
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article
Highly conductive grain boundaries in copper oxide thin films
Abstract
<p>High conductivity in the off-state and low field-effect mobility compared to bulk properties is widely observed in the p-type thin-film transistors of Cu<sub>2</sub>O, especially when processed at moderate temperature. This work presents results from in situ conductance measurements at thicknesses from sub-nm to around 250 nm with parallel X-ray photoelectron spectroscopy. An enhanced conductivity at low thickness is explained by the occurrence of Cu(II), which is segregated in the grain boundary and locally causes a conductivity similar to CuO, although the surface of the thick film has Cu<sub>2</sub>O stoichiometry. Since grains grow with an increasing film thickness, the effect of an apparent oxygen excess is most pronounced in vicinity to the substrate interface. Electrical properties of Cu<sub>2</sub>O grains are at least partially short-circuited by this effect. The study focuses on properties inherent to copper oxide, although interface effects cannot be ruled out. This non-destructive, bottom-up analysis reveals phenomena which are commonly not observable after device fabrication, but clearly dominate electrical properties of polycrystalline thin films.</p>