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Mehrtens, Thorsten
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Publications (5/5 displayed)
- 2018The microstructure, local indium composition and photoluminescence in green-emitting InGaN/GaN quantum wellscitations
- 2016Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
- 2016Quantitative measurements of internal electric fields with differential phase contrast microscopy on InGaN/GaN quantum well structurescitations
- 2015Homogeneity and composition of AlInGaN: A multiprobe nanostructure studycitations
- 2014Quantitative Strain and Compositional Studies of In<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As Epilayer in a GaAs-based pHEMT Device Structure by TEM Techniquescitations
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article
Composition analysis of coaxially grown InGaN multi quantum wells using scanning transmission electron microscopy
Abstract
<jats:p>GaN nanotubes with coaxial InGaN quantum wells were analyzed by scanning transmission electron microscopy in order to determine their structural properties as well as the indium distribution across the InGaN quantum wells. For the latter, two process steps are necessary. First, a technique to prepare cross-sectional slices out of the nanotubes has been developed. Second, an existing scanning transmission electron microscopy analysis technique has been extended with respect to the special crystallographic orientation of this type of specimen. In particular, the shape of the nanotubes, their defect structure, and the incorporation of indium on different facets were investigated. The quantum wells preferentially grow on m-planes of the dodecagonally shaped nanotubes and on semipolar top facets while no significant indium signal was found on a-planes. An averaged indium concentration of 6% to 7% was found by scanning transmission electron microscopy analysis and could be confirmed by cathodoluminescence measurements.</jats:p>