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Bremner, Stephen
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article
Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation
Abstract
<p>We have investigated the ultrafast carrier dynamics in a 1 μm bulk In<sub>0.265</sub>Ga<sub>0.735</sub>N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 10<sup>16</sup>cm<sup>-3</sup>. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 10<sup>18</sup>cm<sup>-3</sup>. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.</p>