| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Shrestha, Santosh
Bath Institute for Rheumatic Diseases
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2016Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitationcitations
- 2016Effect of substrate temperature and radio frequency power on compositional, structural and optical properties of amorphous germanium carbide films deposited using sputteringcitations
- 2015Viability Prediction of Ricinus cummunis L. Seeds Using Multispectral Imagingcitations
Places of action
| Organizations | Location | People |
|---|
article
Extended hot carrier lifetimes observed in bulk In0.265±0.02Ga0.735N under high-density photoexcitation
Abstract
<p>We have investigated the ultrafast carrier dynamics in a 1 μm bulk In<sub>0.265</sub>Ga<sub>0.735</sub>N thin film grown using energetic neutral atom-beam lithography/epitaxy molecular beam epitaxy. Cathodoluminescence and X-ray diffraction experiments are used to observe the existence of indium-rich domains in the sample. These domains give rise to a second carrier population and bi-exponential carrier cooling is observed with characteristic lifetimes of 1.6 and 14 ps at a carrier density of 1.3 × 10<sup>16</sup>cm<sup>-3</sup>. A combination of band-filling, screening, and hot-phonon effects gives rise to a two-fold enhanced mono-exponential cooling rate of 28 ps at a carrier density of 8.4 × 10<sup>18</sup>cm<sup>-3</sup>. This is the longest carrier thermalization time observed in bulk InGaN alloys to date.</p>