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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Renoud, Raphaël
Nantes Université
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2022Crystallographic orientation dependence of ferroelectric domain walls in antiferroelectric lead zirconate thin filmscitations
- 2021Characterization and Performance Analysis of BST-Based Ferroelectric Varactors in the Millimeter-Wave Domaincitations
- 2020Effect of ferroelectric domain walls on the dielectric properties of PbZrO3 thin filmscitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO<sub>3</sub> thin films in the microwave frequency rangecitations
- 2017Effect of the incident power on permittivity, losses and tunability of BaSrTiO 3 thin films in the microwave frequency rangecitations
- 2016Domain wall motions in BST ferroelectric thin films in the microwave frequency rangecitations
- 2016Description of domain wall motions by the hyperbolic law
- 2016Decomposition of the different contributions to permittivity, losses, and tunability in BaSrTiO3 thin films using the hyperbolic lawcitations
- 2015Effect of Manganese Doping of BaSrTiO 3 on Diffusion and Domain Wall Pinningcitations
- 2015Temperature stable BaSrTiO3 thin films suitable for microwave applicationscitations
- 2014Dielectric long time relaxation of domains walls in PbZrTiO3 thin filmscitations
- 2014Electrophoretic deposition of BaTiO3 thin films from stable colloidal aqueous solutionscitations
- 2011The effect of Mn doping on the dielectric properties and domain wall mobility of (Ba0.8Sr0.2)TiO3 thin films
- 2011Ferroelectric thin films for mobile communication applications
- 2011Measurement and Modeling of Dielectric Properties of Pb(Zr,Ti)O-3 Ferroelectric Thin Filmscitations
- 2011Dielectric properties of PZT thin films under a low AC-electric field at different bias fields
- 2011Description of the low field nonlinear dielectric properties of ferroelectric and multiferroic materialscitations
- 2010Measurement and modelisation of dielectric properties of ferroelectrics thin layers
- 2010Description of the nonlinear dielectric properties of ferroelectrics under a weak AC-fieldcitations
- 20071-D modelisation of a BaTiO3 single crystal
Places of action
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article
Decomposition of the different contributions to permittivity, losses, and tunability in BaSrTiO3 thin films using the hyperbolic law
Abstract
International audience ; In this paper, the different contributions to the permittivity of a 1% manganese-doped BaSrTiO3 thin film are presented as a function of the applied DC field. The hyperbolic law has been used to discern the lattice, domain wall vibration, and pinning/unpinning contributions. This decomposition permits us to study the weight of the respective contribution in the total permittivity, the losses, and the tunability. By determining the figure of merit (FoM) of each contribution, the ratio between tun-ability and losses, it is possible to identify the phenomenon which should be limited or enhanced in order to optimize the material's dielectric properties. It is shown that the tunability of the domain wall contribution (approximately 80%) is very important compared to the lattice contribution (41%), the associated dissipation factor, however, is also much larger (0.2 instead of 0.014). Even if the domain wall contribution has been shown to be weak in the investigated thin film (less than 3% in permittivity and tunability), the weight of the losses is not negligible (around 18%). Hence, the domain contribution has to be limited in order to conserve a high FoM for the material. Moreover, it is shown that the AC field used for the material's characterization is important because it governs the weight of the domain wall losses and thus the FoM.