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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Wong, S.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (4/4 displayed)
- 2019DAMASK - The Dusseldorf Advanced Material Simulation Kit for modeling multi-physics crystal plasticity, thermal, and damage phenomena from the single crystal up to the component scale
- 2015The influence of hold time on the onset of plastic deformation in siliconcitations
- 2014Formation of ordered arrays of gold particles by nanoindentation templating
- 2012Arrays of Au nanoparticles on Si formed by nanoindentation and a simple thermal/wipe-off technique
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article
The influence of hold time on the onset of plastic deformation in silicon
Abstract
<p>The transformation of diamond-cubic silicon to the metallic β-Sn phase is known to be "sluggish," even when the critical pressure (∼11 GPa) for the transformation is reached. In this letter, we use nanoindentation to apply pressures to just above the critical threshold. In this regime, the sample displays purely elastic behavior at zero hold time. As the hold time at maximum load is increased up to 180 s, the percentage of indents that plastically deform also increase. Interestingly, the indents deform via one of two distinct processes: either via a phase transformation to a mixed bc8/r8-Si end phase, or by initiation of crystalline defects. Raman spectroscopy and cross-sectional transmission electron microscopy are used to show that the two deformation mechanisms are mutually exclusive under the indentation conditions presented here, and elastic modelling was utilized to propose a model for this mutually exclusive behavior. Hence, this behavior enhances the potential for application of the exotic bc8/r8-Si end phase.</p>