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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Banerjee, Tamalika
University of Groningen
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2024Domains with Varying Conductance in Tensile Strained SrMnO3 Thin Films Using Out-of-Plane Electric Fieldscitations
- 2024Domains with Varying Conductance in Tensile Strained SrMnO 3 Thin Films Using Out-of-Plane Electric Fieldscitations
- 2022Towards Energy Efficient Memristor-based TCAM for Match-Action Processingcitations
- 2018Evolution of the magnetoresistance lineshape with temperature and electric field across Nb-doped SrTiO3 interfacecitations
- 2018Electric Field Modulation of Spin Accumulation in Nb-doped SrTiO3 with Ni/AlOx Spin Injection Contactscitations
- 2018Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devicescitations
- 2018Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3at room temperature
- 2015Electric Field Control of Spin Lifetimes in Nb-SrTiO3 by Spin-Orbit Fields
- 2015Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systemscitations
- 2004Vortex dynamics at subcritical currents at microwave frequencies in DyBa2Cu3O7-δ thin filmscitations
- 2002Peak effect and its evolution with defect structure in YBa2Cu3O7-δ thin films at microwave frequenciescitations
- 2002Effect of swift heavy ion irradiation on surface resistance of DyBa2Cu3O7−δ thin films at microwave frequencies
Places of action
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article
Electrostatic analysis of n-doped SrTiO3 metal-insulator-semiconductor systems
Abstract
Electron doped SrTiO3, a complex-oxide semiconductor, possesses novel electronic properties due to its strong temperature and electric-field dependent permittivity. Due to the high permittivity, metal/n-SrTiO3 systems show reasonably strong rectification even when SrTiO3 is degenerately doped. Our experiments show that the insertion of a sub nanometer layer of AlOx in between the metal and n-SrTiO3 interface leads to a dramatic reduction of the Schottky barrier height (from around 0.90V to 0.25 V). This reduces the interface resistivity by 4 orders of magnitude. The derived electrostatic analysis of the metal-insulator-semiconductor (n-SrTiO3) system is consistent with this trend. When compared with a Si based MIS system, the change is much larger and mainly governed by the high permittivity of SrTiO3. The non-linear permittivity of n-SrTiO3 leads to unconventional properties such as a temperature dependent surface potential non-existent for semiconductors with linear permittivity such as Si. This allows tuning of the interfacial band alignment, and consequently the Schottky barrier height, in a much more drastic way than in conventional semiconductors.