| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pozina, Galia
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (16/16 displayed)
- 2020Emission Properties of GaN Planar Hexagonal Microcavitiescitations
- 2019Graphene-based plasmonic nanocomposites for highly enhanced solar-driven photocatalytic activitiescitations
- 2018Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxycitations
- 2017Near band gap luminescence in hybrid organic-inorganic structures based on sputtered GaN nanorodscitations
- 2017Polarization of stacking fault related luminescence in GaN nanorodscitations
- 2015Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorodscitations
- 2015Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorodscitations
- 2014Decoration of ZnO nanorods with coral reefs like NiO nanostructures by the hydrothermal growth method and their luminescence studycitations
- 2014Properties of the main Mg-related acceptors in GaN from optical and structural studiescitations
- 2013Study of planar defect filtering in InP grown on Si by epitaxial lateral overgrowthcitations
- 2013Luminescence of Acceptors in Mg-Doped GaNcitations
- 2013Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaNcitations
- 2012Optical and structural studies of homoepitaxially grown m-plane GaNcitations
- 2011Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaNcitations
- 2010Indirect optical transition due to surface band bending in ZnO nanotubescitations
- 2008Time-resolved photoluminescence properties of AlGaN/AlN/GaN high electron mobility transistor structures grown on 4H-SiC substratecitations
Places of action
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article
Effect of precursor solutions stirring on deep level defects concentration and spatial distribution in low temperature aqueous chemical synthesis of zinc oxide nanorods
Abstract
<jats:p>Hexagonal c-axis oriented zinc oxide (ZnO) nanorods (NRs) with 120-300 nm diameters are synthesized via the low temperature aqueous chemical route at 80 °C on silver-coated glass substrates. The influence of varying the precursor solutions stirring durations on the concentration and spatial distributions of deep level defects in ZnO NRs is investigated. Room temperature micro-photoluminesnce (μ-PL) spectra were collected for all samples. Cathodoluminescence (CL) spectra of the as-synthesized NRs reveal a significant change in the intensity ratio of the near band edge emission (NBE) to the deep-level emission (DLE) peaks with increasing stirring durations. This is attributed to the variation in the concentration of the oxygen-deficiency with increasing stirring durations as suggested from the X-ray photoelectron spectroscopy analysis. Spatially resolved CL spectra taken along individual NRs revealed that stirring the precursor solutions for relatively short duration (1-3 h), which likely induced high super saturation under thermodynamic equilibrium during the synthesis process, is observed to favor the formation of point defects moving towards the tip of the NRs. In contrary, stirring for longer duration (5-15 h) will induce low super saturation favoring the formation of point defects located at the bottom of the NRs. These findings demonstrate that it is possible to control the concentration and spatial distribution of deep level defects in ZnO NRs by varying the stirring durations of the precursor solutions.</jats:p>