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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Mcmahon, William E.
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Publications (4/4 displayed)
- 2017Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cellscitations
- 2015Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an <i>in situ</i> AsH3 surface preparationcitations
- 2014In situ measurement of CuPt alloy ordering using strain anisotropycitations
- 2013Ordering-enhanced dislocation glide in III-V alloyscitations
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article
Growth of antiphase-domain-free GaP on Si substrates by metalorganic chemical vapor deposition using an <i>in situ</i> AsH3 surface preparation
Abstract
<jats:p>Antiphase-domain (APD) free GaP films were grown on Si(100) substrates prepared by annealing under dilute AsH3 in situ in an MOCVD reactor. LEED and AES surface analysis of Si(100) surfaces prepared by this treatment show that AsH3 etching quickly removes O and C contaminants at a relatively low temperature (690–740 °C), and creates a single-domain “A-type” As/Si surface reconstruction. The resulting GaP epilayers grown at the same temperature are APD-free, and could thereby serve as templates for direct growth of III-V semiconductors on Si. This single chamber process has a low thermal budget, and can enable heteroepitaxial integration of III-Vs and Si at an industrial scale.</jats:p>