• Despeisse, Matthieu
• Barraud, Loris
• Werner, Jérémie
• Geissbühler, Jonas
• Tomasi, Andrea
• Hessler-Wyser, Aïcha
• Wolf, Stefaan De
• Nicolas, Silvia Martin De
• Ballif, Christophe
• Nicolay, Sylvain
• Niesen, Bjoern

Abstract

<jats:p>Substituting the doped amorphous silicon films at the front of silicon heterojunction solar cells with wide-bandgap transition metal oxides can mitigate parasitic light absorption losses. This was recently proven by replacing p-type amorphous silicon with molybdenum oxide films. In this article, we evidence that annealing above 130 °C—often needed for the curing of printed metal contacts—detrimentally impacts hole collection of such devices. We circumvent this issue by using electrodeposited copper front metallization and demonstrate a silicon heterojunction solar cell with molybdenum oxide hole collector, featuring a fill factor value higher than 80% and certified energy conversion efficiency of 22.5%.</jats:p>

Topics

• molybdenum
• amorphous
• copper
• Silicon
• annealing
• curing