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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Luna, E.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2020Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloyscitations
- 2020Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloyscitations
- 2017The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wellscitations
- 2016Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wellscitations
- 2015Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayerscitations
- 2015Te-doping of self-catalyzed GaAs nanowirescitations
- 2013Variation of lattice constant and cluster formation in GaAsBicitations
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article
Te-doping of self-catalyzed GaAs nanowires
Abstract
Tellurium (Te)-doping of self-catalyzed GaAs nanowires (NWs) grown by molecular beam epitaxy is reported. The effect of Te-doping on the morphological and crystal structure of the NWs is investigated by scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (TEM). The study reveals that the lateral growth rate increases and axial growth rate decreases with increasing Te doping level. The changes in the NW morphology can be reverted to some extent by changing the growth temperature. At high doping levels, formation of twinning superlattice is observed alongside with the {111}-facetted sidewalls. Finally, the incorporation of Te is confirmed by Raman spectroscopy.