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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Luna, E.
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Publications (7/7 displayed)
- 2020Increasing Optical Efficiency in the Telecommunication Bands of Strain-Engineered Ga (As,Bi) Alloyscitations
- 2020Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloyscitations
- 2017The role of epitaxial strain on the spontaneous formation of Bi-rich nanostructures in Ga(As,Bi) epilayers and quantum wellscitations
- 2016Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1-xBix/GaAs quantum wellscitations
- 2015Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayerscitations
- 2015Te-doping of self-catalyzed GaAs nanowirescitations
- 2013Variation of lattice constant and cluster formation in GaAsBicitations
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article
Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1-xBix epilayers
Abstract
We report on the spontaneous formation of lateral compositionmodulations (LCMs) in Ga(As, Bi) epilayers grown by low-temperature(<300 degrees C) molecular beam epitaxy (MBE) on GaAs(001). Bothcross-section and plan-view transmission electron microscopy techniquesare used to investigate the nature of the LCMs, consisting of Bi-richcylinder-like nanostructures lying along the [001] growth direction. Theobserved LCMs are the consequence of a two-dimensional phase separationprocess occurring at the surface of the growing epilayers, and theircolumnar nature is consistent with a surface-directed spinodaldecomposition process. Although LCMs are thermodynamically driven, weshow how they can be kinetically controlled, in particular, through theAs/Ga flux ratio and the substrate temperature. This is a result of LCMsdeveloping from surface atomic diffusion processes, since the atomicdimer configurations on the surface alter adatom diffusivity. Thesignificant role of the surface reconstructions is also discussed. (c)2015 AIP Publishing LLC.