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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Dittmann, R.
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Topics
Publications (13/13 displayed)
- 2021Functional Modifications Induced via X-ray Nanopatterning in TiO2 Rutile Single Crystalscitations
- 2019Chemical control of the electrical surface properties in donor-doped transition metal oxidescitations
- 2019Towards Oxide Electronics:a Roadmapcitations
- 2018Charge-transfer in B-site-depleted NdGaO3/SrTiO3 heterostructurescitations
- 2015Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin filmscitations
- 2015Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO$_{3}$ thin filmscitations
- 2014Band alignment at memristive metal-oxide interfaces investigated by hard x-ray photoemission spectroscopycitations
- 2013Nonstoichiometry accommodation in SrTiO3 thin films studied by positron annihilation and electron microscopycitations
- 2013Feasibility studies for filament detection in resistively switching SrTiO3 devices by employing grazing incidence small angle X-ray scatteringcitations
- 2013Feasibility studies for filament detection in resistively switching $SrTiO_{3}$ devices by employing grazing incidence small angle X-ray scatteringcitations
- 2011Bipolar resistive switching in oxides: mechanisms and scalingcitations
- 2009Loadable TiO 2 scaffolds - a correlation study between processing parameters, micro CT analysis and mechanical strengthcitations
- 2007Highly sinter-active (Mg-Cu)-Zn ferrite nanoparticles prepared by flame spray synthesiscitations
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article
Impact of the cation-stoichiometry on the resistive switching and data retention of SrTiO3 thin films
Abstract
<p>Resistive switching oxides are investigated at great length as promising candidates for the next generation of non-volatile memories. It is generally assumed that defects have a strong impact on the resistive switching properties of transition metal oxides. However, the correlation between different types of defect structures and the switching properties is still elusive. We deposited single-crystalline SrTiO<sub>3</sub>thin films with various cation stoichiometry by pulsed laser deposition to investigate the stoichiometry related and therefore defect dependent influence on the resistive switching properties. This letter will reveal the differences in initial states, forming steps, switching characteristics as well as retention times taking into account both point defects and extended defects. We then propose an explanation on the basis of oxygen vacancy generation and redistribution to elucidate the dependence of the resistive switching properties on the cation stoichiometry dependent defect structure.</p>