| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Dimoulas, A.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2023Exploiting the Close-to-Dirac Point Shift of the Fermi Level in the Sb2Te3/Bi2Te3 Topological Insulator Heterostructure for Spin-Charge Conversioncitations
- 20233D/1D Architecture Using a 1-Hexyl-3-methylimidazolium Lead Triiodide Interlayer for Robust and Highly Performing Perovskite Solar Cellscitations
- 2023Significant enhancement of ferromagnetism above room temperature in epitaxial 2D van der Waals ferromagnet Fe5−δGeTe2/Bi2Te3 heterostructurescitations
- 2022Large Spin-to-Charge Conversion at Room Temperature in Extended Epitaxial Sb2Te3 Topological Insulator Chemically Grown on Siliconcitations
- 2022Magnetotransport and ARPES studies of the topological insulators Sb2Te3 and Bi2Te3 grown by MOCVD on large-area Si substratescitations
- 2020Active Trap Determination at the Interface of Ge and In0.53Ga0.47 as Substrates with Dielectric Layerscitations
- 2015Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxycitations
- 2006Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
- 2005HfO2 high-kappa gate dielectrics on Ge(100) by atomic oxygen beam deposition
- 2004Structural characterization of epitaxial Y2O3 on Si (001) and of the Y2O3/Si interfacecitations
- 2004Ru and RuO 2 gate electrodes for advanced CMOS technology
Places of action
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article
Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy
Abstract
<p>Using molecular beam epitaxy, atomically thin 2D semiconductor HfSe<sub>2</sub> and MoSe<sub>2</sub>/HfSe<sub>2</sub> van der Waals heterostructures are grown on AlN(0001)/Si(111) substrates. Details of the electronic band structure of HfSe<sub>2</sub> are imaged by in-situ angle resolved photoelectron spectroscopy indicating a high quality epitaxial layer. High-resolution surface tunneling microscopy supported by first principles calculations provides evidence of an ordered Se adlayer, which may be responsible for a reduction of the measured workfunction of HfSe<sub>2</sub> compared to theoretical predictions. The latter reduction minimizes the workfunction difference between the HfSe<sub>2</sub> and MoSe<sub>2</sub> layers resulting in a small valence band offset of only 0.13 eV at the MoSe<sub>2</sub>/HfSe<sub>2</sub> heterointerface and a weak type II band alignment.</p>