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Matos, Carolina F.
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article
Annealing effect on donor-acceptor interface and its impact on the performance of organic photovoltaic devices based on PSiF-DBT copolymer and C-60
Abstract
In this work, poly[2,7-(9,9-bis(2-ethylhexyl)-dibenzosilole)-alt-4,7-bis(thiophen-2-yl)benzo-2,1,3-thiadiazole] (PSiF-DBT) was used as active layer in bilayer solar cell with C-60 as electron acceptor. As cast devices already show reasonable power conversion efficiency (PCE) that increases to 4% upon annealing at 100 degrees C. Space charge limited measurements of the hole mobility (mu) in PSiF-DBT give mu similar to 1.0 x 10(-4) cm(2) /(V s) which does not depend on the temperature of the annealing treatment. Moreover, positron annihilation spectroscopy experiments revealed that PSiFDBT films are well stacked even without the thermal treatment. The variations in the transport of holes upon annealing are then small. As a consequence, the PCE rise was mainly induced by the increase of the polymer surface roughness that leads to a more effective interface for exciton dissociation at the PSiF-DBT/fullerene heterojunction.