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Routoure, J. -M.
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article
Enhanced electrical and magnetic properties in La<SUB>0.7</SUB>Sr<SUB>0.3</SUB>MnO<SUB>3</SUB> thin films deposited on CaTiO<SUB>3</SUB>-buffered silicon substrates
Abstract
We investigate the suitability of an epitaxial CaTiO<SUB>3</SUB> buffer layer deposited onto (100) Si by reactive molecular-beam epitaxy (MBE) for the epitaxial integration of the colossal magnetoresistive material La<SUB>0.7</SUB>Sr<SUB>0.3</SUB>MnO<SUB>3</SUB> with silicon. The magnetic and electrical properties of La<SUB>0.7</SUB>Sr<SUB>0.3</SUB>MnO<SUB>3</SUB> films deposited by MBE on CaTiO<SUB>3</SUB>-buffered silicon (CaTiO<SUB>3</SUB>/Si) are compared with those deposited on SrTiO<SUB>3</SUB>-buffered silicon (SrTiO<SUB>3</SUB>/Si). In addition to possessing a higher Curie temperature and a higher metal-to-insulator transition temperature, the electrical resistivity and 1/f noise level at 300 K are reduced by a factor of two in the heterostructure with the CaTiO<SUB>3</SUB> buffer layer. These results are relevant to device applications of La<SUB>0.7</SUB>Sr<SUB>0.3</SUB>MnO<SUB>3</SUB> thin films on silicon substrates....