| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Barbera, Marco
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2020Fabrication of Bismuth Absorber Arrays for NTD-Ge Hard X-ray Microcalorimeterscitations
- 2018Magnetic shielding of soft protons in future X-ray telescopes: the case of the ATHENA Wide Field Imagercitations
- 2014Electrical-optical characterization of multijunction solar cells under 2000X concentrationcitations
- 2012Fabrication of Electrical Contacts on Pyramid-Shaped NTD-Ge Microcalorimeters Using Free-Standing Shadow Maskscitations
- 2009Planar Technology for NDT-Ge X-Ray Microcalorimeters: Absorber Fabricationcitations
- 2007Characterization of thin plastic foils for applications in x-ray optics technology
- 2004Thin-shell plastic lenses for space and laboratory applicationscitations
Places of action
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article
Electrical-optical characterization of multijunction solar cells under 2000X concentration
Abstract
In the framework of the FAE "Fotovoltaico ad Alta Efficienza" ("High Efficiency Photovoltaic") Research Project (PO FESR Sicilia 2007/2013 4.1.1.1), we have performed electrical and optical characterizations of commercial InGaP/InGaAs/Ge triple-junction solar cells (1 cm<SUP>2</SUP>) mounted on a prototype HCPV module, installed in Palermo (Italy). This system uses a reflective optics based on rectangular off-axis parabolic mirror with aperture 45×45 cm<SUP>2</SUP> leading to a geometrical concentration ratio of 2025. In this study, we report the I-V curve measured under incident power of about 700 W/m<SUP>2</SUP> resulting in an electrical power at maximum point (P<SUB>MP</SUB>) of 41.4 W. We also investigated the optical properties by the electroluminescence (EL) spectra of the top (InGaP) and middle (InGaAs) subcells. From the analysis of the experimental data we extracted the bandgap energies of these III-V semiconductors in the range 305÷385 K.